Skip to main content
Taiwan Semiconductor Corporation RS1ML RVG — Discrete Semiconductors

Taiwan Semiconductor Corporation RS1ML RVG

MPNRS1ML RVG
Active

DIODE GEN PURP 1KV 800MA SUB SMA

$0.4300Ref. price · indicative, final on quote
PackagingDO-219AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

RS1ML RVG Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 800 mA
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified800mA
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-219AB
Capacitance @ vr, f10pF @ 4V, 1MHz
Reverse recovery time500 ns