Taiwan Semiconductor Corporation RS1ML
MPNRS1ML
Active
DIODE GEN PURP 1KV 800MA SUB SMA
$0.4100Ref. price · indicative, final on quote
PackagingDO-219AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.3 V @ 800 mA |
| Current - reverse leakage @ vr | 5 µA @ 1000 V |
| Current - average rectified | 800mA |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | Standard |
| Case | DO-219AB |
| Capacitance @ vr, | 10pF @ 4V, 1MHz |
| Reverse recovery time | 500 ns |