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Taiwan Semiconductor Corporation ES1JLW — Discrete Semiconductors

ES1JLW – DIODE GEN PURP 600V 1A SOD123W | Taiwan

MPNES1JLW
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DIODE GEN PURP 600V 1A SOD123W

$0.4200Ref. price · indicative, final on quote
PackagingSOD-123W
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ES1JLW specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 1 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseSOD-123W
Capacitance @ vr,20pF @ 4V, 1MHz
Reverse recovery time35 ns