STMicroelectronics STP75NF75, STripFET™ II Series, N-Channel MOSFET, 75V Vdss, 80A Id, 11mOhm Rds(on) @ 40A 10V, 160nC Qg, TO-220-3, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 160 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3700 pF @ 25 V |
This is the spec that tells you whether the part fits your thermal budget, not the 80 A headline.
The TO-220-3 package (supplier device package TO-220) has a metal tab for direct heatsink mounting — the thermal pad area on the PCB or chassis sets the actual junction-to-ambient resistance.
This is the on-resistance that determines conduction loss in your application.