STP19NB20

STMicroelectronics

STMicroelectronics PowerMESH™ N-channel MOSFET, 200V Vdss, 19A continuous drain, 180mOhm Rds(on) at 10V, TO-220-3 through-hole package.

STMicroelectronics STP19NB20
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$1.48/ pc

Volume pricing available from 1,000+ pcs per order.

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Technical specifications

STP19NB20 specifications
Parameter / AttributeSpecification / Value
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 25 V

Technical details

Obsolete — last-time-buy reality

That means the manufacturer no longer produces it, and the only available stock is what remains in the distribution channel or on the surplus market.

Gate charge is 40 nC at 10 V, which gives a rough handle on switching losses; the input capacitance is 1000 pF at 25 V Vds. The TO-220 package handles up to 125 W dissipation at the case, but that assumes a well-heatsinked mounting — in a real design, derate based on the junction-to-case thermal resistance.

Replacement and second-source options

For a direct replacement, look for an N-channel MOSFET in a TO-220 package rated at 200 V Vdss and 19 A Id with an Rds(on) at or below 180 mOhm at 10 V gate drive. Several STMicroelectronics PowerMESH parts in the same voltage class may fit, but verify the gate charge and input capacitance match your switching frequency requirements.

STP19NB20
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