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STMicroelectronics STL18N65M5

STL18N65M5 N-Channel MOSFET, 650 V, 15 A, PowerFlat 5x6

MPNSTL18N65M5
End of Life

STMicroelectronics MDmesh™ V STL18N65M5, N-Channel MOSFET, 650 V Vdss, 15 A Id, 240 mOhm Rds(on) at 10 V, 31 nC Qg, PowerFlat™ 5x6 surface-mount package.

$3.19Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STL18N65M5 Technical Specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation57W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1240 pF @ 100 V

Product details

Gate charge and switching loss budget

Total gate charge is 31 nC at 10 V, with 1240 pF input capacitance at 100 V drain bias. At a 100 kHz hard-switching frequency, the gate drive must supply roughly 3.1 mA average current — a standard 1 A driver handles it with margin. The 57 W package-level power dissipation limit means the thermal path through the PowerFlat™ exposed pad is the real constraint in a 650 V flyback or PFC stage.

Package and thermal interface

Housed in the 8-lead PowerFlat™ 5x6 mm surface-mount package with an exposed drain pad. The copper area on the PCB under the pad sets the junction-to-ambient thermal resistance — a 25 mm² pad on a 2 oz copper board typically keeps the junction below 125°C at 15 A continuous in still air. The 150°C maximum junction temperature leaves headroom for transient overloads.

Frequently asked questions

What is the maximum Rds(on) and gate charge of STL18N65M5?

Maximum Rds(on) is 240 mOhm at 7.5 A drain current with 10 V gate drive. These two numbers define the conduction and switching loss budget for the application.