STMicroelectronics MDmesh™ V STL18N65M5, N-Channel MOSFET, 650 V Vdss, 15 A Id, 240 mOhm Rds(on) at 10 V, 31 nC Qg, PowerFlat™ 5x6 surface-mount package.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 57W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 240mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1240 pF @ 100 V |
At a 100 kHz hard-switching frequency, the gate drive must supply roughly 3.1 mA average current — a standard 1 A driver handles it with margin. The 57 W package-level power dissipation limit means the thermal path through the PowerFlat™ exposed pad is the real constraint in a 650 V flyback or PFC stage.
Housed in the 8-lead PowerFlat™ 5x6 mm surface-mount package with an exposed drain pad.
Maximum Rds(on) is 240 mOhm at 7.5 A drain current with 10 V gate drive. These two numbers define the conduction and switching loss budget for the application.