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Solid State Inc. 1N645-1 — Discrete Semiconductors

Solid State Inc. 1N645-1

MPN1N645-1
Active

DIODE GEN PURP 225V 400MA DO35

$1.8000Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N645-1 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)225 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr50 nA @ 225 V
Current - average rectified400mA
Operating temperature - junction-65°C ~ 175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
TechnologyStandard
CaseDO-204AH, DO-35, Axial