Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Current - continuous drain (Id) @ 25°C | 2.5A (Ta) |
| Power dissipation | 2W (Ta), 25W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Rds on (Max) @ id, vgs | 4.8Ohm @ 1.3A, 15V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 550 pF @ 20 V |