ROHM Semiconductor SCT3120AW7TL
MPNSCT3120AW7TL
End of Life
SICFET N-CH 650V 21A TO263-7
$12.36384Price · pay online now
$12.36 / ea
2 in stock — maximum per order · 3–4 days lead time
PackagingTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Current - continuous drain (Id) @ 25°C | 21A (Tc) |
| Power dissipation | 100W |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Vgs(th) (Max) @ id | 5.6V @ 3.33mA |
| Rds on (Max) @ id, vgs | 156mOhm @ 6.7A, 18V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 460 pF @ 500 V |