SCT2280KEGC11
ROHM Semiconductor SCT2280KEGC11
MPNSCT2280KEGC11
End of Life
1200V, 14A, THD, SILICON-CARBIDE
$12.81996Price · pay online now
$12.82 / ea
1 in stock — maximum per order · 3–4 days lead time
PackagingTO-247-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 18V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 108W (Tc) |
| Operating temperature | 175°C |
| Package | Tube |
| Vgs | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 1.4mA |
| Rds on (Max) @ id, vgs | 364mOhm @ 4A, 18V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 18 V |
| Input capacitance (Ciss) (Max) @ vds | 667 pF @ 800 V |