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ROHM Semiconductor RS6P100BHTB1

ROHM Semiconductor RS6P100BHTB1

MPNRS6P100BHTB1
End of Life

NCH 100V 100A, HSOP8, POWER MOSF

$5.79600Price · pay online now
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$5.80 / ea

1 in stock — maximum per order · 3–4 days lead time

Packaging8-PowerTDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

RS6P100BHTB1 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation104W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs5.9mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2880 pF @ 50 V