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ROHM Semiconductor RS1P600BHTB1

ROHM Semiconductor RS1P600BHTB1

MPNRS1P600BHTB1
End of Life

NCH 100V 60A, HSOP8, POWER MOSFE

$2.81040Price · pay online now
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$2.81 / ea

1 in stock — maximum per order · 3–4 days lead time

Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

RS1P600BHTB1 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 60A (Tc)
Power dissipation3W (Ta), 35W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs8.8mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs64 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4080 pF @ 50 V