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ROHM Semiconductor RH6R025BHTB1

ROHM Semiconductor RH6R025BHTB1

MPNRH6R025BHTB1
End of Life

NCH 150V 25A, HSMT8, POWER MOSFE

$1.58508Price · pay online now
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$1.59 / ea

1 in stock — maximum per order · 3–4 days lead time

Packaging8-PowerVDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Sep 2026

Specifications

RH6R025BHTB1 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation59W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs60mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs16.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1010 pF @ 75 V