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Rohm Semiconductor RS1G201ATTB1 — Discrete Semiconductors

Rohm Semiconductor RS1G201ATTB1

MPNRS1G201ATTB1
Active
$2.8600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RS1G201ATTB1 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C20A (Ta), 78A (Tc)
Power dissipation3W (Ta), 40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs5.2mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs130 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6890 pF @ 20 V