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Rohm Semiconductor RS1G180MNTB — Discrete Semiconductors

Rohm Semiconductor RS1G180MNTB

MPNRS1G180MNTB
Active

MOSFET N-CH 40V 18A/80A 8HSOP

$1.5900Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RS1G180MNTB specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta), 80A (Tc)
Power dissipation3W (Ta), 30W (Tc)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs7mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs19.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1293 pF @ 20 V