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Rohm Semiconductor DTA123JMT2L — Discrete Semiconductors

Rohm Semiconductor DTA123JMT2L

MPNDTA123JMT2L
Active

TRANS PREBIAS PNP 150MW VMT3

$0.3600Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DTA123JMT2L specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max150 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)2.2 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA