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Rohm Semiconductor BSS84T116 — Discrete Semiconductors

Rohm Semiconductor BSS84T116

MPNBSS84T116
Active

MOSFET P-CH 60V 230MA SST3

$0.4300Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS84T116 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C230mA (Ta)
Power dissipation200mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs5.3Ohm @ 230mA, 10V
Input capacitance (Ciss) (Max) @ vds34 pF @ 30 V