Rohm Semiconductor BAS16HYFHT116
MPNBAS16HYFHT116
Active
DIODE GEN PURP 80V 215MA SOT23
$0.4300Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 80 V |
| Voltage - forward (Vf) (Max) @ if | 1.25 V @ 150 mA |
| Current - reverse leakage @ vr | 500 nA @ 80 V |
| Current - average rectified | 215mA |
| Operating temperature - junction | 150°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) Cut Tape (CT) |
| Technology | Standard |
| Qualification | AEC-Q101 |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Capacitance @ vr, | 2pF @ 0V, 1MHz |
| Reverse recovery time | 4 ns |