Skip to main content
Rohm Semiconductor 2SK3065T100 — Discrete Semiconductors

Rohm Semiconductor 2SK3065T100

MPN2SK3065T100
NRND
$0.7500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3065T100 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C2A (Ta)
Power dissipation500mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-243AA
Vgs(th) (Max) @ id1.5V @ 1mA
Rds on (Max) @ id, vgs320mOhm @ 1A, 4V
Input capacitance (Ciss) (Max) @ vds160 pF @ 10 V