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Rohm Semiconductor 2SK3018T106 — Discrete Semiconductors

Rohm Semiconductor 2SK3018T106

MPN2SK3018T106
NRND
$0.3700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK3018T106 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4V
Current - continuous drain (Id) @ 25°C100mA (Ta)
Power dissipation200mW (Ta)
Operating temperature150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id1.5V @ 100µA
Rds on (Max) @ id, vgs8Ohm @ 10mA, 4V
Input capacitance (Ciss) (Max) @ vds13 pF @ 5 V