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Rohm Semiconductor 2SK2095N — Discrete Semiconductors

Rohm Semiconductor 2SK2095N

MPN2SK2095N
Obsolete
$2.7200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SK2095N specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C10A (Ta)
Power dissipation30W (Tc)
Operating temperature150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs95mOhm @ 5A, 10V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 10 V