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Rohm Semiconductor 2SCR512P5T100 — Discrete Semiconductors

Rohm Semiconductor 2SCR512P5T100

MPN2SCR512P5T100
Active
$0.6700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2SCR512P5T100 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown30 V
Current - collector (Ic)2 A
Current - collector cutoff1µA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 100mA, 2V
Power - max500 mW
Frequency - transition320MHz
Operating temperature150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
CaseTO-243AA
Vce saturation (Max) @ ib, ic400mV @ 35mA, 700mA