Gate drive and switching
The UPA2816T1S-E2-AT: 33.4 nC gate charge at 10 V allows switching at moderate frequency with a standard gate driver. Input capacitance is 1160 pF at 10 V drain-source.

Renesas UPA2816T1S--AT, P-Channel MOSFET, 30V Vdss, 17A Id, 15.5mOhm Rds(on) at 10V, 33.4nC Qg, 8-HWSON (3.3x3.3) package, Surface Mount, ROHS3 compliant.
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 1.5W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Rds on (Max) @ id, vgs | 15.5mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1160 pF @ 10 V |
The UPA2816T1S-E2-AT: 33.4 nC gate charge at 10 V allows switching at moderate frequency with a standard gate driver. Input capacitance is 1160 pF at 10 V drain-source.
The maximum on-resistance is 15.5 mOhm at a drain current of 17 A with a 10 V gate drive.
Yes, it is ROHS3 compliant.