600 V, 80 A NPT IGBT in TO-220-3 Full Pack
The Renesas RJP60F5DPK-01#T0 is an N-channel IGBT rated for 600 V collector-emitter breakdown and 80 A continuous collector current, with a pulsed current capability of 160 A. With a gate charge of 74 nC and switching delays of 53 ns turn-on and 90 ns turn-off at 25°C under test conditions of 400 V, 30 A, and a 5 Ohm gate resistor, this IGBT is suited for hard-switched applications such as motor drives, UPS inverters, and induction heating where moderate switching frequencies (typically 10–30 kHz) are used.
Switching performance and gate drive budget
The 74 nC gate charge sets the drive current requirement. The 53 ns/90 ns delay times allow dead-time settings for half-bridge topologies. Maximum power dissipation is 260.4 W.
Package and mounting — TO-220-3 Full Pack
The TO-220-3 Full Pack (also referred to as TO-3P in the supplier device package field) is a fully moulded through-hole package with an isolated mounting surface. The package is supplied in Tube form. Maximum junction temperature is rated at 150°C, so the thermal design must keep Tj below this limit under worst-case load and ambient conditions. The 600 V breakdown voltage provides adequate margin for 230 VAC rectified bus (≈325 VDC) and 400 VDC rails common in three-phase industrial drives.
It is ROHS3 compliant, with no exemptions that would restrict its use in European or global markets. For dual-sourcing or lifecycle risk mitigation, a parametric search for 600 V, 80 A IGBTs in TO-220-3 Full Pack from other vendors (e.g., Infineon, STMicroelectronics) would yield functionally similar alternatives, but pinout and gate drive characteristics should be verified against the target application.