Renesas RJK5035DPP-A0#T2 N-channel MOSFET, 600 V Vdss, 5 A Id, 1.6 Ohm Rds(on) at 2.5 A/10 V, TO-220-3 Full Pack, through hole, active.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 29W (Ta) |
| Operating temperature | 150°C |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Rds on (Max) @ id, vgs | 1.6Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 19 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 600 pF @ 25 V |
The Renesas RJK5035DPP-A0#T2 is a 600 V, 5 A N-channel power MOSFET in a TO-220FP full-pack package.
Gate charge is 19 nC at 10 V. Input capacitance is 600 pF at 25 V Vds. Vgs max rating is ±30 V.
The TO-220FP full-pack package has a fully isolated tab. Supplier device package is TO-220FP.
The specified drive voltage for achieving the rated Rds(on) is 10 V. At 5 V gate drive the on-resistance will be significantly higher than the 1.6 Ohm maximum, which increases conduction loss. A 10 V or 12 V gate supply is recommended for this part.