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Renesas Electronics RJK03M2DPA-00#J5A

RJK03M2DPA-00#J5A N-Channel MOSFET, 30 V, 45 A, 2.8 mOhm

MPNRJK03M2DPA-00#J5A
End of Life

Renesas RJK03M2DPA-00#J5A, N-Channel MOSFET, 30 Vdss, 45 A continuous drain, 2.8 mOhm Rds(on) at 22.5 A, 10 V gate drive, 8-WPAK surface-mount package, 150 °C junction temperature.

$0.81538Ref. price · indicative, final on quote
Renesas Electronics RJK03M2DPA-00#J5A datasheet (PDF)
Packaging8-WFDFN Exposed Pad
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RJK03M2DPA-00#J5A specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C45A (Ta)
Power dissipation40W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-WFDFN Exposed Pad
Rds on (Max) @ id, vgs2.8mOhm @ 22.5A, 10V
Gate charge (Qg) (Max) @ vgs21.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3850 pF @ 10 V

Product details

30 V, 45 A N-channel in an 8-WPAK — the switching FET for 12 V rails

The 8-WFDFN exposed-pad package (supplier device package 8-WPAK) is a small footprint for point-of-load converters, load switches, and battery protection circuits.

Gate charge and drive voltage — logic-level compatible

The FET fully enhances with a 4.5 V gate drive, making it compatible with 5 V logic or a 3.3 V-driven gate driver. Maximum gate charge is 21.2 nC at 4.5 V, so a modest gate-drive IC can switch it at several hundred kilohertz without excessive drive losses. Input capacitance is 3850 pF at 10 V drain-source — the gate-drive loop inductance and resistance need to be kept low to avoid ringing on the gate waveform.

Thermal budget and the exposed pad

Frequently asked questions

What is the closest functional second-source for RJK03M2DPA-00#J5A?

The NP179N055TUK--AY is a higher-voltage (55 V) and higher-current (180 A) N-channel MOSFET in a different package (Tray). It is not a pin-compatible drop-in — the 8-WPAK footprint differs — but it serves as a functional alternative for designs that need more voltage and current headroom. Gate charge is 240 nC at 10 V, which requires a stronger gate driver.