Renesas Electronics RJK03E0DNS-00#J5
MPNRJK03E0DNS-00#J5
End of Life
POWER FIELD-EFFECT TRANSISTOR
$0.87Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 30A (Ta) |
| Power dissipation | 20W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Rds on (Max) @ id, vgs | 5.6mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3050 pF @ 10 V |