Renesas RJK0391DPA-00#J5A, N-Channel Power MOSFET, 30 V drain-to-source, 50 A continuous drain, 2.9 mOhm Rds(on) at 10 V, 34 nC gate charge, 8-PowerWDFN / 8-WPAK package, surface mount.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Ta) |
| Power dissipation | 50W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 2.9mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 5600 pF @ 10 V |
Gate charge is 34 nC maximum at 4.5 V — a moderate figure that keeps the driver current manageable at typical switching frequencies. The input capacitance is 5600 pF at 10 V drain bias, which sets the switching energy and the driver's peak current requirement during the Miller plateau.
The part comes in an 8-PowerWDFN package, supplier device package 8-WPAK (3).
The NP179N055TUK--AY is a higher-voltage (55 V), higher-current (180 A) N-channel MOSFET with a 1.75 mOhm Rds(on) at 90 A. It is not a pin-compatible drop-in — the package differs (tray vs tape/reel) and the gate charge is 240 nC. For a 30 V, 50 A socket, the RJK0391DPA-00#J5A is the correct fit; the NP179N055TUK--AY targets a different power tier and would require board and driver rework.