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Renesas Electronics RJK0354DSP-00#J0

RJK0354DSP-00#J0 N-Channel MOSFET, 30 V, 16 A, 7 mOhm, 8-SOP

MPNRJK0354DSP-00#J0
End of Life

Renesas RJK0354DSP-00#J0 N-Channel MOSFET, 30 V Vdss, 16 A Id, 7 mOhm Rds(on) at 10 V, 12 nC Qg, 8-SOP package, surface mount.

$0.62728Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RJK0354DSP-00#J0 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta)
Power dissipation2W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Rds on (Max) @ id, vgs7mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1740 pF @ 10 V

Product details

30 V N-channel MOSFET in 8-SOP — board-level power switching

It comes in an 8-SOP surface-mount package (0.154-inch width, 3.90 mm) and is intended for low-voltage DC-DC converters, load switches, and power management in industrial and consumer electronics.

That figure sets the I²R conduction loss floor for a given load; at 8 A the dissipation is roughly 0.45 W, well within the 2 W package limit at ambient. Gate charge is 12 nC at 4.5 V, which means a standard 1 A gate driver can switch the MOSFET in tens of nanoseconds. The low Qg suits designs where switching frequency is above 100 kHz and gate-drive losses need to stay under control.

RJK0354DSP-00#J0 carries an active product status. The part is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of RJK0354DSP-00#J0?

Maximum Rds(on) is 7 mOhm at 8 A drain current with 10 V gate drive. This is the key conduction loss spec for load-switch and DC-DC applications.