Renesas RJK0349DSP-01#J0, N-Channel MOSFET, 30 V Vdss, 20 A Id, 3.8 mOhm Rds(on) @ 10 V, 25 nC Qg, 8-SOIC package, Surface Mount, Active.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Rds on (Max) @ id, vgs | 3.8mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3850 pF @ 10 V |
The 3850 pF input capacitance at 10 V drain-source sets the switching energy per cycle; paired with the low Qg, it supports switching frequencies in the tens of kilohertz with modest gate-drive power.
The thermal path relies on the copper pad area on the PCB — a 1 oz pour under the package reduces junction-to-ambient thermal resistance.
For dual-sourcing, evaluate other 30 V N-channel MOSFETs in the 8-SOIC package with similar Rds(on) and gate charge — the 3.8 mOhm at 10 V and 25 nC Qg are the key matching parameters.
The device is supplied in an 8-SOIC package (0.154-inch body width, 3.90 mm width) for surface-mount assembly.