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Renesas Electronics RJK0348DPA-00#J0

Renesas Electronics RJK0348DPA-00#J0

MPNRJK0348DPA-00#J0
End of Life

POWER FIELD-EFFECT TRANSISTOR

$1.78Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSNot applicable
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

RJK0348DPA-00#J0 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Current - continuous drain (Id) @ 25°C50A (Ta)
Power dissipation55W (Tc)
Operating temperature150°C (TJ)
PackageBulk
TechnologyMOSFET (Metal Oxide)
Case8-PowerWDFN
Rds on (Max) @ id, vgs2.5mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5100 pF @ 10 V