Renesas RJK0346DPA-01#J0B, N-Channel MOSFET, 30 V Vdss, 65 A continuous drain, 1.8 mOhm Rds(on) max at 25 A / 10 V, 49 nC gate charge, 8-PowerWDFN / 8-WPAK, Surface Mount, ROHS3 Compliant, Active.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 65A (Ta) |
| Power dissipation | 65W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerWDFN |
| Rds on (Max) @ id, vgs | 1.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 49 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7650 pF @ 10 V |
A 1 A gate driver can charge the gate in roughly 49 ns, supporting switching frequencies well above 100 kHz without the drive circuit dominating the loss budget.
Without that thermal management, the junction temperature rise at 65 A continuous will exceed the 150 °C absolute maximum junction temperature.
That is the worst-case figure across the operating temperature range; typical values at 25 °C junction are lower.
It is still available through the factory channel and independent distribution.