Renesas Electronics RJK0222DNS-00#J5
MPNRJK0222DNS-00#J5
End of Life
POWER FIELD-EFFECT TRANSISTOR
$1.06Ref. price · indicative, final on quote
Packaging8-WDFN Exposed Pad
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Half Bridge) |
| Mounting | Surface Mount |
| Drain to source voltage | 25V |
| Current - continuous drain (Id) @ 25°C | 14A, 16A |
| Power - max | 8W, 10W |
| Operating temperature | 150°C (TJ) |
| Package | Bulk |
| FET feature | Logic Level Gate, 4.5V Drive |
| Case | 8-WDFN Exposed Pad |
| Rds on (Max) @ id, vgs | 9.2mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.2nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 810pF @ 10V |