650 V / 80 A – the hard ceiling for the switching cell
The RJH65T46DPQ-A0#T0 is a Renesas Trench IGBT rated at 650 V collector-emitter breakdown voltage and 80 A continuous collector current.
Vce(on) and gate charge – the loss budget inputs
The total gate charge is 138 nC.
Switching energy and timing – dead-time and heatsink planning
Tested at 400 V, 40 A, with a 10 Ω gate resistor and 15 V gate drive, the turn-on switching energy is 450 µJ and turn-off is 550 µJ. These per-pulse losses, multiplied by the switching frequency, give the total switching loss that the heatsink must dissipate. The turn-on delay (45 ns) and turn-off delay (170 ns) at 25 °C are inputs for dead-time calculation in a half-bridge – a 200 ns dead-time budget is typical to avoid shoot-through with these delay spreads.
Package and thermal path – TO-247A
The maximum junction temperature is 175 °C, and the maximum power dissipation is 340.9 W.
It is ROHS3 compliant.