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Renesas Electronics RJH1CM5DPQ-E0#T2
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Renesas Electronics

RJH1CM5DPQ-E0#T2 IGBT, 1200 V, 30 A, TO-247-3

MPN RJH1CM5DPQ-E0#T2
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RJH1CM5DPQ-E0#T2 IGBT, 1200 V, 30 A, N-channel, 74 nC gate charge, 245 W max power, TO-247-3 through-hole package, 150°C max junction temperature, active lifecycle.

In Stock: 500 pcs
MOQ: 1 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case TO-247-3

Full Technical Specifications

14 Parameters
RJH1CM5DPQ-E0#T2 specifications
Parameter / AttributeSpecification / Value
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown1200 V
Current - collector (Ic)30 A
Power - max245 W
Operating temperature150°C (TJ)
PackageBulk
Gate charge74 nC
CaseTO-247-3
Test condition600V, 15A, 5Ohm, 15V
Switching energy1.6mJ (on), 700µJ (off)
Td (on/off) @ 25°C40ns/100ns
Vce(on) (Max) @ vge, ic2.7V @ 15V, 15A
Reverse recovery time200 ns
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Technical Details & Description

1200 V, 30 A IGBT in a TO-247-3 package

The RJH1CM5DPQ-E0#T2 is an N-channel IGBT rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 30 A, housed in a TO-247-3 through-hole package.

Switching performance and gate drive requirements

Gate charge is 74 nC. Switching energy is 1.6 mJ during turn-on and 700 µJ during turn-off, tested at 600 V, 15 A, with a 5 Ω gate resistor and 15 V gate drive. Turn-on delay is 40 ns and turn-off delay is 100 ns at 25°C, giving a combined switching window that supports carrier frequencies in the tens of kilohertz without excessive dead-time overhead.

On-state voltage and reverse recovery

Reverse recovery time of the internal diode is 200 ns, which influences turn-on loss in hard-switched topologies and may call for a snubber or a fast-recovery external diode in high-frequency designs.

Frequently asked questions

What is the gate charge of RJH1CM5DPQ-E0#T2?

The gate charge is 74 nC, which determines the gate-drive current needed for a given switching frequency.

What is the equivalent or replacement for RJH1CM5DPQ-E0#T2?

No official pin-compatible equivalent or replacement is listed in the cross-reference records. For a functionally similar IGBT in the same voltage and current class, compare 1200 V, 30 A parts in TO-247-3 from other manufacturers — but verify pinout and gate-drive requirements against the datasheet.

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