1200 V, 30 A IGBT in a TO-247-3 package
The RJH1CM5DPQ-E0#T2 is an N-channel IGBT rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 30 A, housed in a TO-247-3 through-hole package.
Switching performance and gate drive requirements
Gate charge is 74 nC. Switching energy is 1.6 mJ during turn-on and 700 µJ during turn-off, tested at 600 V, 15 A, with a 5 Ω gate resistor and 15 V gate drive. Turn-on delay is 40 ns and turn-off delay is 100 ns at 25°C, giving a combined switching window that supports carrier frequencies in the tens of kilohertz without excessive dead-time overhead.
On-state voltage and reverse recovery
Reverse recovery time of the internal diode is 200 ns, which influences turn-on loss in hard-switched topologies and may call for a snubber or a fast-recovery external diode in high-frequency designs.
