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Renesas Electronics R1LV0416DSB-7LI#B0 — Discrete Semiconductors

R1LV0416DSB-7LI#B0 SRAM 4Mbit Parallel 70ns 44-TSOP II

MPNR1LV0416DSB-7LI#B0
End of Life

Renesas Electronics R1LV0416DSB-7LI#B0, 4Mbit parallel SRAM, 70 ns access, 256K x 16, 2.7-3.6 V, -40 to +85°C, 44-TSOP II, Bulk.

$21.31Ref. price · indicative, final on quote
Packaging44-TSOP (0.400", 10.16mm Width)
RoHSNot applicable
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

R1LV0416DSB-7LI#B0 specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.7V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageBulk
TechnologySRAM
Access time70 ns
Memory size4Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page70ns

Product details

4 Mbit parallel SRAM for buffer and cache

The Renesas R1LV0416DSB-7LI#B0 is a 4 Mbit (256K x 16) parallel SRAM in a 44-TSOP II surface-mount package. As a volatile SRAM, it retains data only while powered — suited for high-speed buffer, cache, or scratchpad memory where deterministic access latency matters more than non-volatility.

70 ns access and industrial temperature range

The 70 ns access time means the memory can complete a read or write operation within 70 ns of the address being valid — fast enough for many 8- and 16-bit microcontroller buses running at clock speeds up to about 14 MHz without wait states.

Active production and sourcing posture

The part ships in Bulk packaging, which means it arrives in anti-static tubes or trays (not tape-and-reel) — typical for engineering samples or low-volume production runs where pick-and-place reels are not required.