Renesas NP89N04PDK--AY, N-Channel MOSFET, 40V Vdss, 90A Id, 2.95mOhm Rds(on) at 10V, 102nC Qg, TO-263-3 (D²Pak), 175°C Tj, Active, ROHS3.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 1.8W (Ta), 147W (Tc) |
| Operating temperature | 175°C |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 2.95mOhm @ 45A, 10V |
| Gate charge (Qg) (Max) @ vgs | 102 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5850 pF @ 25 V |
The NP89N04PDK-E1-AY: Gate charge of 102 nC at 10V means the driver sees a moderate capacitive load — a standard 1A gate-driver IC will switch it in the tens of nanoseconds, but the 5850 pF input capacitance at 25V drain bias means the driver's peak current capability sets the rise time, not the MOSFET.
No official cross-reference or pin-compatible second source is listed in the available records. For a 40V N-Channel MOSFET in TO-263-3 with 90A Id and sub-3 mOhm Rds(on), compare the gate charge and input capacitance to ensure the gate-driver circuit is compatible — those parameters vary significantly between suppliers.
Availability and pricing are confirmed at quote time.