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Renesas Electronics NP180N055TUK-E1-AY

NP180N055TUK-E1-AY N-Channel MOSFET, 55V 180A, TO-263-7

MPNNP180N055TUK-E1-AY
End of Life

Renesas NP180N055TUK--AY, N-Channel MOSFET, 55 V Vdss, 180 A Id, 1.4 mOhm Rds(on) at 10 V, 294 nC Qg, TO-263-7 package, Surface Mount, 175 °C Tj.

$4.86Ref. price · indicative, final on quote
PackagingTO-263-7, D²Pak (6 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NP180N055TUK-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation1.8W (Ta), 348W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs294 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds16050 pF @ 25 V

Product details

The NP180N055TUK-E1-AY: The TO-263-7 (D²Pak with 6 leads plus tab) surface-mount package dissipates 348 W at case temperature and 1.8 W in still air at ambient.

Gate charge and switching — what 294 nC means for the driver

Total gate charge is 294 nC at 10 V. That is a heavy gate — at 50 kHz switching, the average gate-drive current works out to about 14.7 mA, but the peak current the driver must source to charge the gate in the desired transition time is what determines the driver's peak output capability. Plan for a driver rated at least 2 A peak to keep the switching edge under 100 ns. Input capacitance is 16050 pF at 25 V drain bias. That large Ciss, combined with the gate charge, means the driver sees a capacitive load that slows the turn-on edge if the drive current is limited. The Miller plateau region will be pronounced; a gate resistor in the 5–10 Ohm range helps control ringing without stretching the switching loss window too far.

The NP180N055TUK--AY carries an active product status. ROHS3 compliant, so it clears the current EU material-restriction requirements without an exemption. The operating junction temperature range extends to 175 °C, which suits high-side switching in under-hood automotive modules or industrial power supplies.

How it compares to the NP179N055TUK-E1-AY

The NP179N055TUK--AY is the closest functional sibling: same 55 V Vdss, same 180 A Id rating, same TO-263-7 package, and same 4 V threshold at 250 µA. The differences are in the on-resistance and gate charge — the NP180N055TUK--AY offers 1.4 mOhm Rds(on) versus 1.75 mOhm, and 294 nC Qg versus 240 nC. The lower Rds(on) reduces conduction loss by about 20 % at full current, but the higher gate charge demands more from the driver. The NP179N055TUK--AY also carries AEC-Q101 automotive qualification, which the NP180N055TUK--AY does not explicitly list.

Frequently asked questions

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