NP180N04TUK-E1-AY

Renesas Electronics

Nexperia NP180N04TUK--AY, N-Channel MOSFET, 40 V Vdss, 180 A continuous drain, 1.05 mOhm Rds(on) at 10 V, TO-263-7 (D²Pak) surface-mount package, 175°C junction temperature.

Renesas Electronics NP180N04TUK-E1-AY
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[IN STOCK] In Stock: 5 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NP180N04TUK-E1-AY specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation1.8W (Ta), 348W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.05mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs297 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds15750 pF @ 25 V

Technical details

NP180N04TUK-E1-AY
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