NP15P06SLG-E1-AY

Renesas Electronics

Renesas NP15P06SLG--AY, P-Channel MOSFET, 60 V Vdss, 15 A continuous drain, 70 mOhm Rds(on) max at 7.5 A, 10 V, TO-252-3 (DPak) surface mount, 175 °C junction, ROHS3 compliant.

Renesas Electronics NP15P06SLG-E1-AY
[IN STOCK] In Stock: 32 pcs
$2.25/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NP15P06SLG-E1-AY specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta)
Power dissipation1.2W (Ta), 30W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 10 V

Technical details

P-channel 60 V switch in a TO-252

The NP15P06SLG-E1-AY: Housed in the TO-252-3 (DPak) surface-mount package, it suits automated assembly.

The gate threshold voltage is specified at 2.5 V maximum with 250 µA drain current, so a 3.3 V logic-level gate drive turns the device on, though the 10 V drive level yields the lowest Rds(on). Gate charge totals 23 nC at 10 V — a 1 A gate driver charges the gate in 23 ns, but the practical switching speed is limited by the 1100 pF input capacitance and the gate-drive loop inductance.

Thermal limits and derating

Maximum junction temperature is 175 °C, allowing operation in high-ambient environments such as under-hood automotive or industrial enclosures. Power dissipation is rated at 1.2 W at 25 °C ambient (no heatsink) and 30 W at 25 °C case temperature — the actual usable current at elevated ambient drops per the derating curve, and the 15 A rating assumes the case is held at 25 °C.

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