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Renesas Electronics NP15P06SLG-E1-AY

NP15P06SLG-E1-AY P-Channel MOSFET, 60 V, 15 A, TO-252

MPNNP15P06SLG-E1-AY
End of Life

Renesas NP15P06SLG--AY, P-Channel MOSFET, 60 V Vdss, 15 A continuous drain, 70 mOhm Rds(on) max at 7.5 A, 10 V, TO-252-3 (DPak) surface mount, 175 °C junction, ROHS3 compliant.

$1.34Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

NP15P06SLG-E1-AY specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta)
Power dissipation1.2W (Ta), 30W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 10 V

Product details

P-channel 60 V switch in a TO-252

The NP15P06SLG-E1-AY: Housed in the TO-252-3 (DPak) surface-mount package, it suits automated assembly.

The gate threshold voltage is specified at 2.5 V maximum with 250 µA drain current, so a 3.3 V logic-level gate drive turns the device on, though the 10 V drive level yields the lowest Rds(on). Gate charge totals 23 nC at 10 V — a 1 A gate driver charges the gate in 23 ns, but the practical switching speed is limited by the 1100 pF input capacitance and the gate-drive loop inductance.

Thermal limits and derating

Maximum junction temperature is 175 °C, allowing operation in high-ambient environments such as under-hood automotive or industrial enclosures. Power dissipation is rated at 1.2 W at 25 °C ambient (no heatsink) and 30 W at 25 °C case temperature — the actual usable current at elevated ambient drops per the derating curve, and the 15 A rating assumes the case is held at 25 °C.

Frequently asked questions

What is the Rds(on) of NP15P06SLG--AY?

The maximum on-resistance is 70 mOhm at a drain current of 7.5 A and a gate-source voltage of 10 V. At a 4.5 V gate drive the Rds(on) is higher — the datasheet curve shows the typical value.

Is NP15P06SLG--AY equivalent to IRF9540?

The NP15P06SLG--AY is a 60 V, 15 A P-channel MOSFET in a TO-252 surface-mount package, while the IRF9540 is a 100 V, 19 A P-channel device in a TO-220 through-hole package. They are not pin-compatible or direct replacements — verify the voltage and package requirements for your application.