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Renesas Electronics NP110N055PUK-E1-AY

NP110N055PUK-E1-AY N-Channel MOSFET, 55 V, 110 A, TO-263

MPNNP110N055PUK-E1-AY
End of Life

Renesas NP110N055PUK--AY, N-Channel MOSFET, 55 V Vdss, 110 A Id, 1.75 mOhm Rds(on) at 10 V, TO-263-3 (D²Pak), Surface Mount, Active, ROHS3 Compliant.

$4.5Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

NP110N055PUK-E1-AY Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation1.8W (Ta), 348W (Tc)
Operating temperature175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.75mOhm @ 55A, 10V
Gate charge (Qg) (Max) @ vgs294 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds16050 pF @ 25 V

Product details

55 V, 110 A — the power-switch tier this part fills

The NP110N055PUK-E1-AY: N-Channel MOSFET, 55 V drain-source, 110 A continuous drain. Requires 10 V gate drive for minimum on-resistance. The headline on-resistance is 1.75 mOhm maximum at 55 A drain current with 10 V gate drive — this is the number that sets conduction losses in a high-current path like a motor drive or DC-DC converter output stage. Gate charge totals 294 nC at 10 V, and input capacitance is 16050 pF at 25 V drain-source — these drive the switching speed and gate-driver sizing.

Thermal reality: 348 W at case, 1.8 W at ambient

The power dissipation spec tells the real story: 348 W maximum when the case temperature is held at 25 °C, but only 1.8 W when the ambient air is 25 °C. That 200× ratio means this MOSFET will not deliver 110 A without a heatsink — the D²Pak tab must be soldered to a large copper plane or bolted to a heatsink to keep the junction below the 175 °C maximum. The operating junction temperature is rated to 175 °C, which is typical for automotive-grade power MOSFETs and gives some headroom in a thermally marginal layout.

TO-263 (D²Pak) — surface-mount power footprint

The NP110N055PUK--AY comes in a TO-263-3 package, also called D²Pak (2 leads plus tab). This is a surface-mount package with an exposed drain tab that must be soldered to the PCB copper pour for both electrical connection and heat spreading. The tab is the drain terminal — the PCB land pattern needs a large copper area with thermal vias to inner layers to pull heat away from the junction.

Peer comparison: NP179N055TUK-E1-AY

It shares the same 55 V drain-source rating, same 1.75 mOhm Rds(on) at 10 V, and same 175 °C junction temperature, but it is rated for 180 A continuous drain — 70 A more than the NP110N055PUK--AY. Its gate charge is lower at 240 nC, which reduces driver losses at high frequency. The NP179N055TUK--AY also carries AEC-Q101 automotive qualification, making it the preferred choice for under-hood or chassis-domain applications where the NP110N055PUK--AY lacks that certification.

Frequently asked questions

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Mechanical compatibility with PCB layout is essential before purchase.