Renesas NP110N04PUK--AY, N-Channel MOSFET, 40 V Vdss, 110 A continuous drain at 25°C, 1.4 mOhm Rds(on) at 55 A, 10 V gate drive, TO-263-3 (D²Pak) surface-mount package, 175°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 1.8W (Ta), 348W (Tc) |
| Operating temperature | 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 1.4mOhm @ 55A, 10V |
| Gate charge (Qg) (Max) @ vgs | 297 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 15750 pF @ 25 V |
The NP110N04PUK-E1-AY: NP110N04PUK--AY is an N-channel MOSFET with 40 V Vdss and 1.4 mOhm Rds(on) at 55 A, 10 V gate drive.
Total gate charge is 297 nC at 10 V, with input capacitance of 15750 pF at 25 V drain bias.
The NP179N055TUK--AY is a functional alternative in the same TO-263-3 package, offering 55 V Vdss and 180 A Id with AEC-Q101 qualification. Its Rds(on) is 1.75 mOhm at 90 A, slightly higher than the 1.4 mOhm of the NP110N04PUK--AY.