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Renesas Electronics N0607N-ZK-E1-AY

N0607N-ZK-E1-AY - Renesas Electronics

MPNN0607N-ZK-E1-AY
End of Life

ABU / MOSFET

$2.1Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

N0607N-ZK-E1-AY specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C65A (Ta)
Power dissipation1W (Ta), 87.4W (Tc)
Operating temperature150°C
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs8.4mOhm @ 32.5A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3300 pF @ 25 V