Renesas Electronics ISL6208CBZ-T — Power Management (PMIC / Gate Driver)
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RoHS Compliant · Lead-Free EIA-481 Standard
Renesas Electronics / Power Management (PMIC / Gate Driver)

Renesas ISL6208CBZ-T Half-Bridge Gate Driver, 2A, 8-SOIC

MPN ISL6208CBZ-T
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

Renesas Electronics ISL6208CBZ-T half-bridge N-channel MOSFET gate driver, 2A peak source/sink, 4.5V to 5.5V supply, 8ns rise/fall, 8-SOIC surface mount package.

In Stock: 2,450 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$2.13 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$2.13
10+ pcs
$1.92
30+ pcs
$1.75
100+ pcs
$1.58
500+ pcs
$1.47
1,000+ pcs
$1.38
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$2.13 / ea

2,450 in stock — maximum per order · 3–4 days lead time

$1.92 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V

Full Technical Specifications

14 Parameters
ISL6208CBZ-T specifications
Parameter / AttributeSpecification / Value
Gate typeN-Channel MOSFET
Input typeNon-Inverting
Channel typeSynchronous
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Logic voltage - VIL, VIH0.5V, 2V
High side voltage - max (Bootstrap)33 V
Current - peak output (Source, sink)2A, 2A
Operating temperature-10°C ~ 125°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)8ns, 8ns
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Technical Details & Description

Active production — sourcing for the BOM line

The ISL6208CBZ-T: ROHS3 compliant — no restricted-substance exemptions that would trigger a future revision or require a waiver for European-market builds.

Half-bridge driver — 2 A peak into synchronous N-channel FETs

Driven configuration is half-bridge, channel type synchronous, gate type N-channel MOSFET — the standard topology for a synchronous buck converter's high-side and low-side FETs. Peak output current is 2 A source and 2 A sink, enough to charge and discharge the gate capacitance of a medium-power MOSFET in the 10–30 nC range without excessive switching loss. Non-inverting input means the driver output follows the logic input without polarity inversion — the PWM controller's signal goes straight to the driver without an external inverter.

Supply rail and bootstrap — 5 V part with 33 V high-side headroom

High-side bootstrap voltage maximum is 33 V, meaning the floating driver supply can ride up to 33 V above the switch node — adequate for a 24 V input rail with margin for transients.

Switching speed and package — 8 ns edges in an 8-SOIC

Typical rise and fall times are 8 ns each — fast enough for switching frequencies above 500 kHz without the dead-time penalty eating into duty cycle, but fast enough that the gate-drive loop inductance must be kept under 10 nH to avoid ringing. Package is 8-SOIC (0.154" body width, 3.90 mm), supplier device package 8-SOIC — standard footprint with no exposed thermal pad, so junction-to-ambient thermal resistance depends on the PCB copper area under the part.

Frequently asked questions

What is the ISL6208CBZ-T's gate type and driver configuration?

It is a half-bridge driver for N-channel MOSFETs, synchronous channel type, with a non-inverting input. The driven configuration is half-bridge, meaning it drives one high-side and one low-side N-channel FET in a synchronous buck topology.

What is the ISL6208CBZ-T's peak output current?

Peak output current is 2 A source and 2 A sink, sufficient for driving medium-power MOSFETs with gate charge in the 10–30 nC range.

What package does the ISL6208CBZ-T come in?

It is supplied in an 8-SOIC package (0.154" body width, 3.90 mm width) with a supplier device package of 8-SOIC. Available in tape and reel or cut tape formats.

ISL6208CBZ-T
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