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Renesas Electronics Corporation AT25PE80-SSHN-B — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25PE80-SSHN-B

MPNAT25PE80-SSHN-B
Active

8 MBIT, WIDE VCC (1.7V TO 3.6V),

$2.5000Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

AT25PE80-SSHN-B Technical Specifications
ParameterValue
Memory typeNon-Volatile
Mounting typeSurface Mount
Voltage1.7V ~ 3.6V
Frequency133 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTube
TechnologyFLASH - NOR (SLC)
Access time6 ns
Memory size8Mbit
Memory formatFLASH
Case8-SOIC (0.154\", 3.90mm Width)
Memory organization1M x 8
Write cycle time - word, page8µs, 4ms