Skip to main content
Renesas Electronics 71V416L10BEG — Interface & Transceivers

71V416L10BEG Renesas 4Mbit Async SRAM, 10 ns, 48-CABGA

MPN71V416L10BEG
End of Life

Renesas Electronics 71V416L10BEG asynchronous SRAM, 4Mbit, 256K x 16, 10 ns access time, parallel interface, 3.0-3.6 V, 0°C to 70°C, 48-CABGA (9x9 mm), Tray.

$9.43Ref. price · indicative, final on quote
Packaging48-TFBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V416L10BEG specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

4Mbit async SRAM in a 48-ball BGA

The 71V416L10BEG is a 4Mbit asynchronous SRAM from Renesas, organized as 256K x 16 bits with a 10 ns access time. Housed in a 48-CABGA (9x9 mm) package, this is a surface-mount device intended for reflow assembly — not a hand-solderable part. The fine-pitch BGA footprint requires a controlled solder profile and X-ray inspection for voiding.

Speed, timing, and temperature grade

With a 10 ns access time and a matching 10 ns write cycle time (word/page), this SRAM keeps up with medium-speed bus masters without wait-state insertion in many 16-bit microcontroller and DSP designs. The 256K x 16 organization means a single chip provides a 16-bit data word per address, simplifying the bus layout compared to two 8-bit-wide parts.

No official successor or second-source cross-reference is published. The 48-CABGA package is unique to this density and organization; a board spin would be required to substitute a different SRAM footprint.