Skip to main content
Renesas Electronics 71V016SA15BF — Discrete Semiconductors

Renesas 71V016SA15BF SRAM, 1 Mbit, 15 ns, 48-CABGA

MPN71V016SA15BF
End of Life

Renesas Electronics 71V016SA15BF asynchronous SRAM, 1 Mbit (64K x 16), 15 ns access time, 3 V to 3.6 V supply, 48-CABGA (7x7 mm), Bulk.

$2.19Ref. price · indicative, final on quote
Packaging48-LFBGA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71V016SA15BF specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case48-LFBGA
Memory organization64K x 16
Write cycle time - word, page15ns

Product details

1 Mbit asynchronous SRAM in a 48-ball BGA

The 71V016SA15BF is a 1 Mbit asynchronous SRAM organized as 64K x 16 bits, with a 15 ns access time that suits cacheless microcontroller expansion, FIFO buffers, or data-logging memory where deterministic read/write cycles matter more than pipelined throughput.

Package and board-fit realities

Post-reflow X-ray inspection is advisable: a cold joint on a single address or data line can look like a functional fault and waste debug time on an otherwise good board.

That means it remains a valid BOM line for new and sustaining production without a forced migration.