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Renesas Electronics 71T75602S200BGG — Discrete Semiconductors

71T75602S200BGG SRAM 18Mbit 200MHz 3.2ns 119-BGA

MPN71T75602S200BGG
End of Life

Renesas 71T75602S200BGG, 18Mbit Synchronous SRAM (ZBT), 512K x 36, 200 MHz clock, 3.2 ns access, Parallel interface, 2.375V-2.625V supply, 0°C to 70°C, 119-PBGA (14x22 mm).

$8.66Ref. price · indicative, final on quote
Packaging119-BGA
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71T75602S200BGG specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.375V ~ 2.625V
Frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Synchronous, SDR (ZBT)
Access time3.2 ns
Memory size18Mbit
Memory formatSRAM
Case119-BGA
Memory organization512K x 36

Product details

18 Mbit synchronous ZBT SRAM for high-throughput buffers

The Renesas 71T75602S200BGG is a 18 Mbit synchronous SRAM organized 512K x 36, built on Zero Bus Turnaround (ZBT) technology. It clocks at 200 MHz with a 3.2 ns access time.

200 MHz clock and 3.2 ns access — timing margin for the bus

The 200 MHz clock rate sets the maximum bus frequency for a zero-wait-state memory transaction. At 3.2 ns access time, the part delivers data within one clock cycle at speed.

Commercial temperature grade — indoor equipment only

Not suitable for outdoor base stations, engine bays, or factory floors without active climate control. The 119-ball BGA footprint requires a multilayer PCB with via-in-pad or microvia capability; plan for X-ray inspection during assembly to verify solder joints under the package.

Frequently asked questions

What is the lead time for 71T75602S200BGG?

Lead time is confirmed at quote time against an RFQ. Typical lead times for active synchronous SRAMs in BGA packages range from several weeks to a few months depending on factory backlog and order quantity.