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Renesas Electronics 71P74604S250BQ — Discrete Semiconductors

Renesas 71P74604S250BQ QDR II SRAM, 18Mbit, 250 MHz

MPN71P74604S250BQ
End of Life

Renesas Electronics 71P74604S250BQ QDR II synchronous SRAM, 18 Mbit (512K x 36), 250 MHz clock, 8.4 ns access time, 1.7-1.9 V, 165-CABGA (13x15 mm), Bulk.

$6.68Ref. price · indicative, final on quote
Packaging165-TBGA
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71P74604S250BQ specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBulk
TechnologySRAM - Synchronous, QDR II
Access time8.4 ns
Memory size18Mbit
Memory formatSRAM
Case165-TBGA
Memory organization512K x 36

Product details

QDR II SRAM — 18 Mbit at 250 MHz

The 71P74604S250BQ is a QDR II (Quad Data Rate) synchronous SRAM from Renesas, organized as 512K x 36 bits for a total of 18 Mbit. It clocks at 250 MHz, delivering a peak bandwidth of 2.25 GB/s on a 36-bit parallel bus — the QDR architecture transfers data on both clock edges, doubling throughput per pin vs standard synchronous SRAM. Access time is 8.4 ns, which sets the window from address latch to valid data out.

Package and board-fit — 165-CABGA

Housed in a 165-ball CABGA (13x15 mm body), the 71P74604S250BQ uses a 1.0 mm ball pitch. The 165-TBGA designation is the same package — TBGA and CABGA are interchangeable here. Supplied in Bulk (trays or tubes), not tape-and-reel — factor this into the pick-and-place feeder setup. The package is RoHS non-compliant, so it is a legacy-alloy (tin-lead) part. For RoHS-exempt or military/aerospace BOMs this is acceptable; for lead-free reflow profiles the solder ball composition may not wet properly at standard lead-free peak temperatures.

Temperature grade and operating range

This limits deployment to indoor, temperature-controlled environments — telecom central offices, data-center line cards, or lab instrumentation. Not suitable for industrial (-40°C to +85°C) or automotive under-hood use without additional thermal management.

Frequently asked questions

What is the memory organization of 71P74604S250BQ?

The 71P74604S250BQ is organized as 512K words by 36 bits (512K x 36), giving 18 Mbit total. The x36 bus width is wider than the common x18 or x9 QDR parts — useful for 36-bit data paths or ECC-protected words where the extra bits carry the check code.

Is 71P74604S250BQ RoHS compliant?

No — the RoHS status is marked as non-compliant. This is a tin-lead (eutectic) BGA part. It is acceptable for RoHS-exempt applications (military, aerospace, medical implant) or legacy BOMs that still run tin-lead reflow. For lead-free assembly, the solder ball metallurgy may not reflow correctly at typical lead-free peak temperatures (245-260°C).