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Renesas Electronics 71256SA25TPG — Discrete Semiconductors

Renesas 71256SA25TPG SRAM, 256Kbit, 25ns, 28-DIP

MPN71256SA25TPG
End of Life

Renesas Electronics 71256SA25TPG, 256Kbit (32K x 8) Parallel SRAM, 25 ns access time, 4.5V-5.5V supply, 0°C to 70°C, 28-DIP (0.300", 7.62mm), Tube.

$3.92Ref. price · indicative, final on quote
Renesas Electronics 71256SA25TPG datasheet (PDF)
Packaging28-DIP (0.300", 7.62mm)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

71256SA25TPG specifications
ParameterValue
Memory typeVolatile
MountingThrough Hole
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time25 ns
Memory size256Kbit
Memory formatSRAM
Case28-DIP (0.300\", 7.62mm)
Memory organization32K x 8
Write cycle time - word, page25ns

Product details

25 ns access in a legacy 28-DIP footprint

The 71256SA25TPG is a 256Kbit asynchronous SRAM organized as 32K x 8, with a 25 ns access time that sets the bus-cycle ceiling for a 5 V logic system. In a 28-pin DIP (0.300" body), this is the through-hole parallel memory for designs that need a drop-in replacement or a new build on a legacy board where the PLCC or SOJ footprint is not an option.

Write cycle and bus timing

The write cycle time equals the 25 ns access time — word or page mode — so the memory keeps up with a 40 MHz bus without wait states on back-to-back writes.

Frequently asked questions

What is the memory organization and access time of 71256SA25TPG?

It is a 256Kbit SRAM organized as 32K x 8 with a 25 ns access time and a 25 ns write cycle time.